DocumentCode
1464089
Title
RF technique for determining ambipolar carrier lifetime in PIN RF switching diodes
Author
Caverly, R.H.
Author_Institution
Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA
Volume
34
Issue
23
fYear
1998
fDate
11/12/1998 12:00:00 AM
Firstpage
2277
Lastpage
2278
Abstract
A new method is presented for determining the carrier lifetime in silicon or gallium arsenide PIN RF switching diodes using microwave and RF measurements. Swept frequency measurements are used to determine the reactance minimum of the PIN diode. This frequency of the PIN diode reactance minimum is shown to be inversely proportional to the I-region carrier lifetime. The procedure can be performed at high or low bias levels on any PIN diode technology
Keywords
UHF diodes; UHF measurement; carrier lifetime; electric reactance; gallium arsenide; p-i-n diodes; semiconductor device measurement; semiconductor switches; silicon; I-region carrier lifetime; PIN RF switching diodes; RF measurements; ambipolar carrier lifetime; microwave measurements; reactance minimum; swept frequency measurements;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981568
Filename
739667
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