Title :
Striped-channel InAlAs/InGaAs HEMTs with shallow-grating structures
Author :
Kwon, Youngwoo ; Pavlidis, Dimitris ; Hein, Kevin ; Brock, Tim
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
Striped-channel (SC) InAlAs/InGaAs HEMTs have been demonstrated with shallow gratings. The shallow grating structure keeps the gate from touching the channel layer and thus solves the gate leakage problem observed in the deep grating devices on InP substrates. Various channel widths have been realized to study the impact of the channel width on the dc and microwave performance. Due to the enhanced charge control in the SC HEMTs, enhanced transconductance/source-drain current (Gm /Ids) and transconductance/output conductance (Gm /Gds) were observed. Compared with conventional HEMTs, the SC HEMTs showed degraded fT due to additional parasitic capacitances and improved fmax due to better carrier confinement
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; characteristics measurement; high electron mobility transistors; indium compounds; leakage currents; microwave field effect transistors; III-V semiconductors; InAlAs-InGaAs; carrier confinement; channel widths; enhanced charge control; gate leakage problem; microwave performance; parasitic capacitances; shallow-grating structures; striped-channel HEMTs; transconductance/output conductance; transconductance/source-drain current; Degradation; Gate leakage; Gratings; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave devices; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
