DocumentCode
1464172
Title
Analysis of IGBT modules connected in series
Author
Githiari, A.N. ; Palmer, P.R.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
145
Issue
5
fYear
1998
fDate
10/1/1998 12:00:00 AM
Firstpage
354
Lastpage
360
Abstract
An analysis is presented of IGBTs connected in series, with reference to the phenomenon of parasitic oscillation. A linear model is developed for use in the study. Two methods are proposed; an analytical approach and a numerical approach based on the state space analysis. The analytical approach offers insight into the effect of the various parameters, whereas the numerical approach offers greater accuracy as it makes fewer assumptions. The theoretical analysis is corroborated by the experimental results from a step-up convertor. Conclusions are drawn concerning the circuit design, and appropriate experimental results are provided, illustrating near ideal operation
Keywords
insulated gate bipolar transistors; IGBT modules; analytical approach; circuit analysis; linear model; numerical approach; parasitic oscillation; series-connected modules; state space analysis; step-up convertor;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:19982123
Filename
739680
Link To Document