DocumentCode :
1464172
Title :
Analysis of IGBT modules connected in series
Author :
Githiari, A.N. ; Palmer, P.R.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Volume :
145
Issue :
5
fYear :
1998
fDate :
10/1/1998 12:00:00 AM
Firstpage :
354
Lastpage :
360
Abstract :
An analysis is presented of IGBTs connected in series, with reference to the phenomenon of parasitic oscillation. A linear model is developed for use in the study. Two methods are proposed; an analytical approach and a numerical approach based on the state space analysis. The analytical approach offers insight into the effect of the various parameters, whereas the numerical approach offers greater accuracy as it makes fewer assumptions. The theoretical analysis is corroborated by the experimental results from a step-up convertor. Conclusions are drawn concerning the circuit design, and appropriate experimental results are provided, illustrating near ideal operation
Keywords :
insulated gate bipolar transistors; IGBT modules; analytical approach; circuit analysis; linear model; numerical approach; parasitic oscillation; series-connected modules; state space analysis; step-up convertor;
fLanguage :
English
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2409
Type :
jour
DOI :
10.1049/ip-cds:19982123
Filename :
739680
Link To Document :
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