Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage Stress

Author

Luo, Wun-Cheng ; Lin, Kuan-Liang ; Huang, Jiun-Jia ; Lee, Chung-Lun ; Hou, Tuo-Hung

Author_Institution

Dept. of Electron. Eng. & the Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

33

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

597

Lastpage

599

Abstract

This letter proposes a novel technique for predicting with high confidence the disturbance of the resistive-switching random access memory (RRAM) RESET state based on ramped voltage stress. The technique yields statistical distributions and voltage acceleration parameters equivalent to those of a conventional constant voltage method. Several ramp rates and acceleration models were validated for the accuracy regarding conversion between the two methods. The proposed method not only reduces the time and cost of reliability analysis but also provides a quantitative link between disturbance properties and the widely available RRAM data measured by a linear voltage ramp. Additionally, the non-Poisson area scaling supports the localized filament model.

Keywords

integrated circuit reliability; random-access storage; statistical distributions; RRAM RESET-state disturb rapid prediction; acceleration models; constant voltage method; localized filament model; ramp rate models; ramped voltage stress; reliability analysis; resistive-switching random access memory RESET-state; statistical distributions; the non-Poisson area scaling; voltage acceleration parameters; Acceleration; Breakdown voltage; Electric breakdown; Reliability; Stress; Switches; Voltage measurement; Read disturb; reliability; resistive switching; resistive-switching random access memory (RRAM); voltage acceleration model;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2185838

Filename

6165330