Title :
Characteristics of silicon n+-n--n+ diode with sub-micrometer n - region
Author :
Nishizawa, Jun-ichi ; Takeda, Nobuo ; Masuoka, Fujio
Author_Institution :
Tohoku Univ., Sendai, Japan
fDate :
12/1/1996 12:00:00 AM
Abstract :
In this paper, the I-V characteristics of silicon n+-n --n+ diode are investigated as a parameter of the length of the n- region. This diode with shorter n- region than 1 μm has the ohmic characteristics until reaching high electric field in spite of the existence of numerous space-charges in the n- region, for the first time in this report. This conductance of the diode is inversely proportional to the third power of the length of the n- region. The experimental results are in good agreement with an analytical calculation including the diffusion term of carriers injected from the n+ regions to the n- region. However, the diode with longer n- region than 2 μm shows the space-charge-limited conduction which is the same as earlier reports
Keywords :
characteristics measurement; elemental semiconductors; semiconductor device models; semiconductor diodes; silicon; I-V characteristics; Si; diffusion term; n+-n--n+ diode; ohmic characteristics; space-charge-limited conduction; space-charges; sub-micrometer n- region; Communication system control; Diodes; Electrons; Gallium arsenide; Germanium; Proximity effect; Scattering; Semiconductor diodes; Silicon; Solids; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
