• DocumentCode
    146442
  • Title

    Study of MEMS technology and development of condenser microphone

  • Author

    Jain, Jaiyasha ; Tripathy, M.R.

  • Author_Institution
    Dept. of ECE, Amity Univ., Noida, India
  • fYear
    2014
  • fDate
    25-26 Sept. 2014
  • Firstpage
    880
  • Lastpage
    882
  • Abstract
    This paper presents brief study of MEMS technology and development of condenser microphone with no holes in back plate. In general silicon materials are used in MEMs. MEMS devices can be fabricated by using bulk micromachining and surface micromachining. Microphone is designed by using a thin silicon crystalline material as flexible diaphragm and gold material as back plate. The aim of this paper is to study MEMS technology and development of microphone with more capacitance and sensitivity at low fabrication cost. With the help of equivalent circuit model, we have calculated pull-in voltage, resonant frequency, capacitance and sensitivity. Condenser Microphone has a diaphragm thickness of 20 μm, of square shaped diaphragm of area of 5mm × 5mm, air gap of 10 μm and back plate thickness of 20 μm. A 3V bias voltage is applied to the microphone. The sensitivity is 3.98 μV/Pa of microphone having no holes in back plate.
  • Keywords
    elemental semiconductors; equivalent circuits; gold; micromachining; micromechanical devices; microphones; silicon; Au; MEMS technology; Si; back plate; bulk micromachining; condenser microphone; equivalent circuit; flexible diaphragm; gold material; pull-in voltage; resonant frequency; silicon materials; size 20 mum; surface micromachining; thin silicon crystalline material; voltage 3 V; Micromachining; Micromechanical devices; Microphones; Resonant frequency; Sensitivity; Silicon; Circuit diagram of Microphone; Condenser microphone; MEMS technology; Sensitivity and pull-in voltage; Structure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Confluence The Next Generation Information Technology Summit (Confluence), 2014 5th International Conference -
  • Conference_Location
    Noida
  • Print_ISBN
    978-1-4799-4237-4
  • Type

    conf

  • DOI
    10.1109/CONFLUENCE.2014.6949240
  • Filename
    6949240