A switching device based on a-Si:H n-i-δp-i-n stacked structure: modeling and characterization

Author

Caputo, Domenico ; De Cesare, Giampiero

Author_Institution

Dipartimento di Ingegneria Elettronica, Rome Univ., Italy

Volume

43

Issue

12

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2109

Lastpage

2112

Abstract

A new two-terminal switching device based on an a-Si:H n-i-δp-i-n symmetrical structure is investigated. The current through the device arises from thermionic emission of electrons over the triangular barrier lowered by the applied voltage. The key role of the thickness and of the doping level of the central δp layer on the electrical behavior of the device is analyzed in detail by a numerical model. The current-voltage characteristic of an optimized device exhibits an ON/OFF current ratio, taken at 3 and 1 V, respectively, of six orders of magnitude with a nonlinearity factor η=3.7

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; semiconductor device models; semiconductor switches; silicon; thermionic electron emission; Si:H; a-Si:H n-i-δp-i-n stacked structure; current-voltage characteristics; nonlinearity factor; numerical model; on/off current ratio; thermionic electron emission; triangular barrier; two-terminal switching device; Active matrix organic light emitting diodes; Current-voltage characteristics; Doping; Electron emission; Numerical models; P-i-n diodes; PIN photodiodes; Switches; Thermionic emission; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.544381

Filename

544381