Full Analytical Evaluation of the Einstein Relation for Disordered Semiconductors

Author

Copuroglu, Ebru ; Mehmetolu, Tural

Author_Institution

Dept. of PhysicsFaculty of Arts & Sci., Gaziosmanpasa Univ., Tokat, Turkey

Volume

62

Issue

5

fYear

2015

fDate

May-15

Firstpage

1580

Lastpage

1583

Abstract

We present a simple analytical method for the evaluation of the Einstein relation for disordered semiconductors with exponential distribution of tail states. The proposed analytical method is based on the binomial expansion theorems, and the calculation result permitted an accurate evaluation of the validity of the analytical approximation, as well as further improvement of the theoretical formulas. The accuracy and the efficiency of the obtained formulas of the Einstein relation for disordered semiconductors are demonstrated with the comparison of the numerical and analytical results. The formulas can be used to analyze the experimental results.

Keywords

binomial distribution; semiconductor materials; Einstein relation; binomial expansion theorem; disordered semiconductor; tail states; Accuracy; Approximation methods; Exponential distribution; Frequency modulation; Physics; Reliability theory; Binomial expansion theorems; Einstein relation; Einstein relation.; disordered semiconductors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2414474

Filename

7079494