A novel in-situ SOI characterization technique: the intrinsic point-probe MOSFET

This letter presents a novel, simple yet powerful method, called the intrinsic point-probe MOSFET technique, dedicated to accurate in situ evaluation of SOI material electrical parameters. The proposed method is free of parasitic series resistances and is particularly adapted for both static and dynamic investigations. It is essentially based on the inspection of the intrinsic conductance of the inversion channel induced by the substrate bias acting as a gate. Analytical models of the intrinsic conductance and related parameter extraction procedures are presented and validated on state-of-the-art Unibond wafers.