DocumentCode
1464646
Title
RIE gate-recessed (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P/InGaAs double doped-channel FETs using CHF3+BCl3 mixing plasma
Author
Yang, Shih-Cheng ; Hsien-Chin Chin ; Chien, Feng-Tso ; Chan, Yi-Jen ; Kuo, Jenn-Ming
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Volume
22
Issue
4
fYear
2001
fDate
4/1/2001 12:00:00 AM
Firstpage
170
Lastpage
172
Abstract
BCl/sub 3/+CHF/sub 3/ gas mixtures for the reactive ion etching process were applied to the gate-recess for fabricating (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P quaternary heterostructure double doped-channel FET´s (D-DCFET), where a high uniformity of Vth was achieved. With the merits of this wide bandgap (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P layer, microwave power performance of this heterostructure D-DCFET demonstrates a compatible performance for devices fabricated on AlGaAs/InGaAs heterostructures.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device breakdown; sputter etching; wide band gap semiconductors; (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P-InGaAs; (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P/InGaAs double doped-channel FETs; BCl/sub 3/; BCl/sub 3/-CHF/sub 3/ gas mixture; CHF/sub 3/+BCl/sub 3/ mixing plasma; D-DCFET; RIE gate-recess; Schottky turn-on voltage; breakdown voltage; etch selectivity; microwave power performance; reactive ion etching process; threshold voltage uniformity; trifluoromethane-BCl/sub 3/; wide bandgap (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P layer; Current density; Double-gate FETs; Dry etching; Gallium arsenide; HEMTs; Indium gallium arsenide; Linearity; Microwave devices; Photonic band gap; Plasma applications;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.915602
Filename
915602
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