Title :
A formation of cobalt silicide on silicon field emitter arrays by electrical stress
Author :
Lee, Jong Duk ; Jin, Sung Hun ; Shim, Byung Chang ; Park, Byung-Gook
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
4/1/2001 12:00:00 AM
Abstract :
A novel process utilizing electrical stress is proposed for the formation of Co silicide on single crystal silicon (c-Si) FEAs to improve the field emission characteristics. Co silicide FEAs formed by electrical stress (ES) exhibited a significant improvement in turn-on voltage and emission current compared with c-Si FEAs. The improvement mainly comes from the lower effective work function of Co silicide and less blunting of tips during silicidation by electrical stress in an ultra high vacuum (UHV) environment less than 10/sup -8/ torr.
Keywords :
cobalt compounds; electron field emission; silicon; vacuum microelectronics; work function; 1E-8 torr; Co silicide; CoSi-Si; Si; Si FEAs; effective work function; electrical stress; emission current; field emission characteristics; field emitter arrays; silicidation; single crystal silicon; tip blunting reduction; turn-on voltage; ultra high vacuum environment; Cobalt; Electric resistance; Field emitter arrays; Frequency; Heating; Silicidation; Silicides; Silicon; Thermal stresses; Voltage;
Journal_Title :
Electron Device Letters, IEEE
