Title :
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
Author :
Chung, G.Y. ; Tin, C.C. ; Williams, J.R. ; McDonald, K. ; Chanana, R.K. ; Weller, Robert A. ; Pantelides, S.T. ; Feldman, Leonard C. ; Holland, O.W. ; Das, M.K. ; Palmour, John W.
Author_Institution :
Dept. of Phys., Auburn Univ., AL, USA
fDate :
4/1/2001 12:00:00 AM
Abstract :
Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub 2/ interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases from approximately 2/spl times/10/sup 13/ to 2/spl times/10/sup 12/ eV/sup -1/ cm/sup -2/ following anneals in nitric oxide at 1175/spl deg/C for 2 h. The effective channel mobility for MOSFETs fabricated with either wet or dry oxides increases by an order of magnitude to approximately 30-35 cm/sup 2//V-s following the passivation anneals.
Keywords :
MOS capacitors; MOSFET; annealing; carrier mobility; interface states; nitridation; oxidation; passivation; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 1175 C; 2 hour; 4H-SiC MOSFETs; MOS capacitors; NO; SiC-SiO/sub 2/; SiC/SiO/sub 2/ interface states; ac conductance; capacitance-voltage measurements; conduction band edge; dry oxides; effective channel mobility; high temperature anneals; interface trap density; inversion channel mobility; lateral inversion-mode 4H-SiC MOSFETs; passivation; quasistatic C-V measurements; wet oxides; Annealing; Interface states; Laboratories; MOSFETs; Oxidation; Passivation; Physics; Silicon carbide; Temperature; Tin;
Journal_Title :
Electron Device Letters, IEEE
