DocumentCode :
1464667
Title :
A 0.1–0.3 V 40–123 fJ/bit/ch On-Chip Data Link With ISI-Suppressed Bootstrapped Repeaters
Author :
Ho, Yingchieh ; Su, Chauchin
Author_Institution :
Electr. Eng. Dept., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
47
Issue :
5
fYear :
2012
fDate :
5/1/2012 12:00:00 AM
Firstpage :
1242
Lastpage :
1251
Abstract :
This paper presents a 40-130 fJ/bit/ch on-chip data link design under a 0.1-0.3 V power supply. A bootstrapped CMOS repeater is proposed to drive a 10 mm on-chip bus. It features a -VDD to 2VDD swing to enhance the driving capability and reduces the sub-threshold leakage current. Additionally, a precharge enhancement scheme increases the speed of the data transmission, and a leakage current reduction technique suppresses ISI jitter. A test chip is fabricated in a 55 nm SPRVT Low-K CMOS process. The measured results demonstrate that for a 10 mm on-chip bus, the achievable data rate is 0.8-100 Mbps, and the energy consumption is 40-123 fJ per bit under 0.1-0.3 V VDD.
Keywords :
CMOS integrated circuits; bootstrap circuits; data communication; integrated circuit design; interference suppression; intersymbol interference; jitter; leakage currents; radiofrequency interference; repeaters; system-on-chip; ISI jitter; ISI-suppressed bootstrapped CMOS repeaters; SPRVT low-K CMOS process; data transmission; driving capability; energy consumption; leakage current reduction technique; on-chip bus; on-chip data link; precharge enhancement scheme; size 10 mm; size 55 nm; subthreshold leakage current; test chip fabrication; voltage 0.1 V to 0.3 V; Boosting; Leakage current; Logic gates; Noise; Repeaters; System-on-a-chip; Threshold voltage; Bootstrapped circuit; energy efficient; inter-symbol interference (ISI); leakage current reduction low-power; low-voltage; sub-threshold circuit;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2012.2186722
Filename :
6165387
Link To Document :
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