Title :
A 0.5 V 1.1 MS/sec 6.3 fJ/Conversion-Step SAR-ADC With Tri-Level Comparator in 40 nm CMOS
Author :
Shikata, Akira ; Sekimoto, Ryota ; Kuroda, Tadahiro ; Ishikuro, Hiroki
Author_Institution :
Electr. Eng. Dept., Keio Univ., Yokohama, Japan
fDate :
4/1/2012 12:00:00 AM
Abstract :
This paper presents an extremely low-voltage operation and power efficient successive-approximation-register (SAR) analog-to-digital converter (ADC). Tri-level comparator is proposed to relax the speed requirement of the comparator and decrease the resolution of internal Digital-to-Analog Converter (DAC) by 1-bit. The internal charge redistribution DAC employs unit capacitance of 0.5 fF and ADC operates at nearly thermal noise limitation. To deal with the problem of capacitor mismatch, reconfigurable capacitor array and calibration procedure were developed. The prototype ADC fabricated using 40 nm CMOS process achieves 46.8 dB SNDR and 58.2 dB SFDR with 1.1 MS/sec at 0.5 V power supply. The FoM is 6.3-fJ/conversion step and the chip die area is only 160 μm × 70 μm.
Keywords :
CMOS integrated circuits; analogue-digital conversion; calibration; capacitors; comparators (circuits); digital-analogue conversion; low-power electronics; thermal noise; CMOS process; calibration procedure; capacitance 0.5 fF; capacitor mismatch; internal DAC resolution; internal charge redistribution DAC; internal digital-to-analog converter resolution; noise figure 46.8 dB; noise figure 58.2 dB; power efficient SAR-ADC; power efficient successive-approximation-register analog-to-digital converter; reconfigurable capacitor array; thermal noise limitation; trilevel comparator; voltage 0.5 V; word length 1 bit; Calibration; Capacitance; Capacitors; Clocks; Delay; Jitter; Noise; ADC; CMOS; low-voltage; meta-stable; reconfigurable DAC; successive approximation; tri-level comparator;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2012.2185352