Channel Film Thickness Effect of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors

Author

Ma, William Cheng-Yu ; Chiang, Tsung-Yu ; Yeh, Chi-Ruei ; Chao, Tien-Sheng ; Lei, Tan-Fu

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

58

Issue

4

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

1268

Lastpage

1272

Abstract

In this paper, the channel-film-thickness effect of low-temperature polycrystalline-Si thin-film transistors (LTPS-TFTs) is investigated. Greater channel film thickness can provide a higher field-effect mobility μ_FE, rising from 14.33 to 22.33 cm²/ V.s, as the channel film thickness increases from 55 to 120 nm, due to grain-size effect. In addition, varying the channel film thickness of LTPS-TFTs results in different junction leakage current due to the source/drain (S/D) junction area effect. Moreover, the S/D series resistance also significantly increases when the channel film thickness is reduced from 120 to 35 nm, leading to poor field-effect mobility _FE and driving current. Consequently, the optimum channel film thickness for active-matrix liquid-crystal displays may be identified.

Keywords

cryogenic electronics; silicon; thin film transistors; S-D series resistance; Si; active-matrix liquid-crystal displays; channel film thickness effect; driving current; field-effect mobility; grain-size effect; junction leakage current; low-temperature polycrystalline thin-film transistors; source-drain junction area effect; Iron; Leakage current; Resistance; Silicon; Thin film transistors; Channel film thickness; low-temperature polycrystalline-Si thin-film transistors (LTPS-TFTs); scaling down;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2104362

Filename

5723733