DocumentCode :
1464707
Title :
Submicrometer Ultralow-Power TFT With 1.8 nm NAOS  \\hbox {SiO}_{2}/\\hbox {20} \\hbox {nm} CVD \\hbox {Si</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Kubota, Yasushi ; Matsumoto, Taketoshi ; Imai, Shigeki ; Yamada, Mikihiro ; Tsuji, Hiroshi ; Taniguchi, Kenji ; Terakawa, Sumio ; Kobayashi, Hikaru</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Liquid Crystal Display Group, Sharp Corp., Taki, Japan</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>58</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>4</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2011</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fDate : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>4/1/2011 12:00:00 AM</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1134</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1140</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>We have fabricated submicrometer ultralow-power thin-film transistors (TFTs) with stack gate dielectric structure formed by the nitric acid oxidation of Si (NAOS) method. A 1.8 nm NAOS SiO<sub>2</sub> layer effectively blocks the leakage current, and consequently, the thickness of a gate oxide layer deposited on the NAOS SiO<sub>2</sub> layer can be made as thin as 20 nm. Because of the thin gate oxide layer, submicrometer TFTs with gate length in the range of 0.6-0.9 μm can be fabricated. The operation voltage of the TFTs can be set as low as 1.5 V because of the low threshold voltages (i.e., -0.6 V for P-ch TFT and 0.6 V for N-ch TFT). The drain current versus source-drain voltage curves possess an ideal feature with sufficiently high saturation currents even at 1.5 V operation voltage. The drain current versus gate voltage curves show a sharp current increase, and the subthreshold swing value is ~80 mV/dec for both P-ch and N-ch TFTs. The on/off ratio is ~10<sup>9</sup> for both P-ch and N-ch TFTs, and the channel mobility is ~100 cm<sup>2</sup>/V·s for P-ch TFT and ~200 cm<sup>2</sup>/V·s for N-ch TFT.</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>insulated gate field effect transistors; nanoelectronics; power semiconductor devices; silicon compounds; thin film transistors; NAOS CVD gate stack structure; SiO<sub>2</sub>; drain current; gate oxide layer; leakage current; nitric acid oxidation; size 1.8 nm to 0.9 mum; source-drain voltage curves; stack gate dielectric structure; submicrometer ultralow-power TFT; submicrometer ultralow-power thin-film transistors; thin gate oxide layer; voltage 0.6 V; Dielectrics; Leakage current; Logic gates; Oxidation; Plasma temperature; Silicon; Thin film transistors; Dielectric film; leakage current; oxidation; thin-film transistor (TFT);</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fLanguage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>English</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Journal_Title : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Electron Devices, IEEE Transactions on</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Publisher : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>ieee</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>ISSN : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>0018-9383</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Type : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>jour</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>DOI : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10.1109/TED.2011.2108657</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Filename : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>5723735</div>
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            <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Link To Document : </div><div class='valueDiv leftDirection leftAlign fullRecValueEnglish col-xs-8 col-sm-10'><a href='https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1464707' target='_blank'>https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1464707</a></div>
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