• DocumentCode
    1464726
  • Title

    SET Tolerant Dynamic Logic

  • Author

    She, Xiaoxuan ; Li, N. ; Erstad, D. Oliswy

  • Author_Institution
    State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
  • Volume
    59
  • Issue
    2
  • fYear
    2012
  • fDate
    4/1/2012 12:00:00 AM
  • Firstpage
    434
  • Lastpage
    438
  • Abstract
    This paper presents three SET tolerant dynamic logic circuits. The first one uses redundant PMOS transistors in the precharge circuit and dual redundant pull down networks in the evaluation circuit to mitigate SETs effectively. The second one adds two feedback inverters and two PMOS transistors to harden against SET, even in case of two sequential SETs. The third one connects dual redundant pull down networks in series and uses only one feedback inverter and one PMOS transistor to harden against one or two SETs. Simulation and experimental results demonstrate that these proposed schemes can achieve good SET hardening capability.
  • Keywords
    MOSFET; logic circuits; logic design; SET tolerant dynamic logic circuit; dual redundant pull down network; feedback inverter; precharge circuit; redundant PMOS transistor; single event transient; Circuit faults; Delay; Inverters; Logic circuits; Logic gates; Single event upset; Tunneling magnetoresistance; Dynamic logic; hardened by design; radiation effects; single event transient (SET);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2183614
  • Filename
    6165398