Title :
SET Tolerant Dynamic Logic
Author :
She, Xiaoxuan ; Li, N. ; Erstad, D. Oliswy
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
fDate :
4/1/2012 12:00:00 AM
Abstract :
This paper presents three SET tolerant dynamic logic circuits. The first one uses redundant PMOS transistors in the precharge circuit and dual redundant pull down networks in the evaluation circuit to mitigate SETs effectively. The second one adds two feedback inverters and two PMOS transistors to harden against SET, even in case of two sequential SETs. The third one connects dual redundant pull down networks in series and uses only one feedback inverter and one PMOS transistor to harden against one or two SETs. Simulation and experimental results demonstrate that these proposed schemes can achieve good SET hardening capability.
Keywords :
MOSFET; logic circuits; logic design; SET tolerant dynamic logic circuit; dual redundant pull down network; feedback inverter; precharge circuit; redundant PMOS transistor; single event transient; Circuit faults; Delay; Inverters; Logic circuits; Logic gates; Single event upset; Tunneling magnetoresistance; Dynamic logic; hardened by design; radiation effects; single event transient (SET);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2183614