Title :
Direct measurement of Cbe and Cbc versus voltage for small HBT´s with microwave s-parameters for scaled Gummel-Poon BJT models
Author :
Chang, Charles ; Asbeck, Peter ; Zampardi, Peter ; Wang, K.C.
Author_Institution :
Rockwell Inst. Sci. Center, Thousand Oaks, CA, USA
fDate :
1/1/1999 12:00:00 AM
Abstract :
A novel method for determining the junction capacitances versus voltage in heterojunction bipolar transistors (HBT´s) using s-parameters at microwave frequencies is presented. This new technique has several advantages over traditional approaches, which include: (1) it profiles capacitance at greater forward bias; (2) it enables the direct measurement of minimum geometry transistors; (3) it allows for the accurate extraction of scaled HBT model parameters with emitter length; and (4) it results in improved pad parasitic deembedding for accurate modeling. Both the capacitance-voltage and large-signal HBT model results are shown
Keywords :
S-parameters; capacitance measurement; heterojunction bipolar transistors; microwave bipolar transistors; microwave measurement; semiconductor device measurement; semiconductor device models; HBT; RF-CV model; heterojunction bipolar transistor; junction capacitance measurement; large-signal model; microwave S-parameters; pad parasitic deembedding; parameter extraction; scaled Gummel-Poon BJT model; Capacitance measurement; Geometry; Heterojunction bipolar transistors; Length measurement; Microwave frequencies; Microwave transistors; Parasitic capacitance; Scattering parameters; Solid modeling; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
