DocumentCode
1464908
Title
Analysis of conductivity degradation in gold/platinum-doped silicon
Author
Valdinoci, Marina ; Colalongo, Luigi ; Pellegrini, Aurelio ; Rudan, Massimo
Author_Institution
Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
Volume
43
Issue
12
fYear
1996
fDate
12/1/1996 12:00:00 AM
Firstpage
2269
Lastpage
2275
Abstract
A general model is presented, describing the effects of gold/platinum doping in silicon. The steady-state case is then analyzed with reference to the conductivity degradation due to deep impurities in realistic cases of n- and p-type materials. In particular, the different influence of gold with respect to platinum in n-type material, due to the localization in energy of the two acceptor levels, is quantitatively explained and reproduced
Keywords
deep levels; electrical conductivity; elemental semiconductors; gold; impurity states; platinum; semiconductor doping; silicon; Si:Au; Si:Pt; acceptor level; conductivity degradation; deep impurity; doped silicon; energy localization; model; n-type material; p-type material; Conducting materials; Conductivity; Degradation; Doping; Gold; Impurities; Platinum; Semiconductor process modeling; Silicon; Steady-state;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.544420
Filename
544420
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