2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT)

Author

Takahashi, Yoshikazu ; Koga, Takeharu ; Kirihata, Humiaki ; Seki, Yasukazu

Author_Institution

Adv. Device Technol. Lab., Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan

Volume

43

Issue

12

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2276

Lastpage

2282

Abstract

A 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT) has been developed. This is the first work to demonstrate the possibility of a high-voltage, high-current, and highly reliable flat-packaged MOS controlled device. The 20-mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not arranged. The great advantage of this structure is the double side cooling and the emitter wire bondingless. The micro-stack IGBT shows the high-blocking voltage of 2.5 kV, the typical on-state voltage of 3.5 V at the collector current I_c=100 A, the turn-off capability of 8×I_c, and the good pressure contact for the electrical and thermal characteristics in the range from 2 to 8 kN/chip

Keywords

insulated gate bipolar transistors; semiconductor device packaging; 100 A; 2.5 kV; MOS controlled device; blocking voltage; collector current; double side cooling; electrical characteristics; emitter wire bondingless; flat-packaged IGBT; high-voltage high-current device; micro-stack IGBT; on-state voltage; pressure contact; thermal characteristics; turn-off capability; Bonding; Contacts; Controllability; Cooling; Electrodes; Inductance; Insulated gate bipolar transistors; Plastic packaging; Semiconductor optical amplifiers; Voltage; Wire;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.544421

Filename

544421