DocumentCode :
1464923
Title :
Optimization of power diode characteristics by means of ion irradiation
Author :
Vobecký, Jan ; Hazdra, Pavel ; Homola, Jaroslav
Author_Institution :
Fac. of Electr. Eng., Czech Tech. Univ., Prague, Czech Republic
Volume :
43
Issue :
12
fYear :
1996
fDate :
12/1/1996 12:00:00 AM
Firstpage :
2283
Lastpage :
2289
Abstract :
The static and dynamic parameters of a bipolar power diode are optimized by the use of helium irradiation. The optimal position for the defect peak caused by the irradiation was found in the n-base very close to the anode junction. This was verified by both the simulation and the experiment
Keywords :
helium; ion beam effects; optimisation; power semiconductor diodes; He; He irradiation; bipolar power diode; characteristics optimisation; dynamic parameters; ion irradiation; power diode characteristics; static parameters; Anodes; Diodes; Helium; Microelectronics; Nuclear power generation; Protons; Shape; Tail; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.544422
Filename :
544422
Link To Document :
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