Title :
Interleaving Energy-Conservation Mode (IECM) Control in Single-Inductor Dual-Output (SIDO) Step-Down Converters With 91% Peak Efficiency
Author :
Lee, Yu-Huei ; Yang, Yao-Yi ; Wang, Shih-Jung ; Chen, Ke-Horng ; Lin, Ying-Hsi ; Chen, Yi-Kuang ; Huang, Chen-Chih
Author_Institution :
Inst. of Electr. Control Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
4/1/2011 12:00:00 AM
Abstract :
The proposed single-inductor dual-output (SIDO) converter with interleaving energy-conservation mode (IECM) control is designed using 65 nm technology to power the ultra-wide band (UWB) system. The energy-conservation mode (ECM) control generates four different energy delivery paths for dual buck outputs with only one inductor. In addition, the superposition technique is used to achieve a minimized inductor current level. The average inductor current is equal to the summation of two output loads. Moreover, the IECM control activates the interleaving operation through the current interleaving mechanism to provide large driving capability as well as to reduce the output voltage ripple. As a result, 91% peak efficiency is derived and the output voltage ripple appears notably minimized by 50% using current interleaving at heavy load. The test chip occupies 1.44 mm2 in 65 nm CMOS and integrates with a three-dimensional (3-D) architecture for inductor integration.
Keywords :
CMOS integrated circuits; inductors; power convertors; three-dimensional integrated circuits; ultra wideband communication; 3D architecture; CMOS; inductor current; inductor integration; interleaving energy conservation mode control; single inductor dual output step down converters; superposition technique; ultrawide band system; Converters; Electronic countermeasures; Inductors; Sensors; Switches; Voltage control; Current interleaving; DC-DC converter; energy delivery path; output voltage ripple; power conversion efficiency; single-inductor dual-output (SIDO) converter; ultra-wide band (UWB) system;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2011.2108850