Title :
Further Comments on “Threshold voltage model for deep-submicrometer MOSFETs” and its extension to subthreshold operation
Author :
Niu, G.F. ; Ruan, G. ; Chen, R.M.M.
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Hong Kong
fDate :
12/1/1996 12:00:00 AM
Abstract :
This correspondence extends Iniguez´s results [see ibid., vol. 42, no. 9, p. 1712, 1995] to give threshold voltage expression with higher computational efficiency, and extends the surface potential model at threshold voltage [see ibid., vol. 40, no. 1, p. 86, 1993] to subthreshold operation
Keywords :
MOS integrated circuits; MOSFET; VLSI; circuit analysis computing; semiconductor device models; surface potential; computational efficiency; deep-submicrometer MOSFETs; subthreshold operation; surface potential model; threshold voltage model; Circuit simulation; Cities and towns; Computational efficiency; Equations; MOSFET circuits; Numerical simulation; Solid modeling; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
