DocumentCode :
1465017
Title :
Spectroscopic Response of CZT Detectors Obtained by the Boron Oxide Encapsulated Vertical Bridgman Method
Author :
Auricchio, N. ; Marchini, L. ; Caroli, E. ; Cola, A. ; Farella, I. ; Donati, A. ; Zappettini, A.
Author_Institution :
INAF/IASF-Bologna, Bologna, Italy
Volume :
58
Issue :
2
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
552
Lastpage :
558
Abstract :
Great efforts are being presently devoted to the development of CdTe and CdZnTe detectors for a large variety of applications, such as the basic, medical, industrial, and space research. The purpose of this work is to present the spectroscopic proper ties of some CZT crystals grown by the boron oxide encapsulated vertical Bridgman method, which has been recently implemented at IMEM-CNR. By this technique the crystal, during the growth, is fully encapsulated by a thin layer of liquid boron oxide, so that the crystal-crucible contact is prevented, thus allowing larger single grains with lower dislocation density to be obtained. Several detectors were realized about 4 mm x 4 mm x 1 mm in size, with two planar gold contacts on both the surfaces realized by an electroless technique. The behavior of these detectors was studied as a function of the bias voltage, irradiation geometry and energy of the interacting photons. Good electron charge collection properties have been demonstrated and electric field distribution has been investigated using the Pockels effect.
Keywords :
X-ray spectroscopy; boron compounds; crystal growth from melt; encapsulation; semiconductor counters; CZT crystals; CZT detectors; CdZnTe detectors; IMEM-CNR; Pockels effect; bias voltage; boron oxide; crystals growth; electric field distribution; electroless technique; irradiation geometry; lower dislocation density; photon interaction; semiconductor material; vertical Bridgman Method; Boron; Crystals; Detectors; Energy resolution; Geometry; Photonics; CdZnTe detectors; gamma-ray spectroscopy; mobility-lifetime product;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2010.2103324
Filename :
5723780
Link To Document :
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