Title :
Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETs
Author :
Mahapatra, S. ; Rao, V. Ramgopal ; Cheng, B. ; Khare, M. ; Parikh, Chetan D. ; Woo, J.C.S. ; Vasi, Juzer M.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Bombay, India
fDate :
4/1/2001 12:00:00 AM
Abstract :
Metal-nitride-semiconductor FETs (MNSFETs) having channel lengths down to 100 mm and a novel jet vapor deposited (JVD) Si3N4 gate dielectric have been fabricated and characterized. When compared with MOSFETs having a thermal SiO2 gate insulator, the MNSFETs show a comparable drain current drive, transconductance, subthreshold slope and pre-stress interface quality. A novel charge pumping technique is employed to characterize the hot-carrier induced interface-trap generation in MNSFETs and MOSFETs. Under identical substrate current during stress, MNSFETs show less interface-state generation and drain current degradation, for various channel lengths, stress times and supply voltages, despite the fact that the Si-Si3N4 barrier (2.1 eV) is lower than the Si-SiO2 barrier (3.1 eV). The time and voltage dependence of hot-carrier degradation has been found to be distinctly different for MNSFETs compared to SiO2 MOSFETs
Keywords :
MISFET; dielectric thin films; electron traps; elemental semiconductors; hot carriers; semiconductor device reliability; silicon; silicon compounds; vapour deposition; 100 nm; 2.1 eV; MNSFETs; Si-Si3N4; channel lengths; charge pumping technique; drain current degradation; drain current drive; gate dielectric; hot-carrier induced interface-trap generation; hot-carrier reliability; interface-state generation; jet vapor deposition; metal-nitride-semiconductor FETs; pre-stress interface quality; subthreshold slope; transconductance; Character generation; Charge pumps; Degradation; Dielectrics and electrical insulation; FETs; Hot carriers; MOSFETs; Thermal stresses; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
