DocumentCode
1465178
Title
Coupling effects on wire delay. Challenges in deep submicron VLSI design
Author
Zhang, Xiaonan
Author_Institution
Metaflow Technol. Inc., La Jolla, CA, USA
Volume
12
Issue
6
fYear
1996
fDate
11/1/1996 12:00:00 AM
Firstpage
12
Lastpage
18
Abstract
Coupling is a complex phenomenon, especially where the high-gain coupling effect is concerned. To introduce coupling effects on wire delay, including the high-gain coupling effect, this article presents a generalization of a study that evolved from a real VLSI design. Possible solutions to coupling effects such as CAD tools, circuit design methodology, and circuit design techniques are also discussed. The conclusions and results presented in this article are based on current complementary metal oxide semiconductor (CMOS) technologies
Keywords
CMOS integrated circuits; VLSI; circuit CAD; delays; integrated circuit design; CAD; CMOS technology; circuit design; coupling; deep submicron VLSI design; wire delay; CMOS technology; Capacitance; Circuit simulation; Circuit synthesis; Coupling circuits; Delay effects; Integrated circuit interconnections; Switches; Very large scale integration; Wire;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/101.544446
Filename
544446
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