• DocumentCode
    1465178
  • Title

    Coupling effects on wire delay. Challenges in deep submicron VLSI design

  • Author

    Zhang, Xiaonan

  • Author_Institution
    Metaflow Technol. Inc., La Jolla, CA, USA
  • Volume
    12
  • Issue
    6
  • fYear
    1996
  • fDate
    11/1/1996 12:00:00 AM
  • Firstpage
    12
  • Lastpage
    18
  • Abstract
    Coupling is a complex phenomenon, especially where the high-gain coupling effect is concerned. To introduce coupling effects on wire delay, including the high-gain coupling effect, this article presents a generalization of a study that evolved from a real VLSI design. Possible solutions to coupling effects such as CAD tools, circuit design methodology, and circuit design techniques are also discussed. The conclusions and results presented in this article are based on current complementary metal oxide semiconductor (CMOS) technologies
  • Keywords
    CMOS integrated circuits; VLSI; circuit CAD; delays; integrated circuit design; CAD; CMOS technology; circuit design; coupling; deep submicron VLSI design; wire delay; CMOS technology; Capacitance; Circuit simulation; Circuit synthesis; Coupling circuits; Delay effects; Integrated circuit interconnections; Switches; Very large scale integration; Wire;
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/101.544446
  • Filename
    544446