Title :
High Signal-to-Noise Ratio Avalanche Photodiodes With Perimeter Field Gate and Active Readout
Author :
Dandin, Marc ; Abshire, Pamela
Author_Institution :
Fischell Dept. of Bioeng., Univ. of Maryland, College Park, MD, USA
fDate :
4/1/2012 12:00:00 AM
Abstract :
This letter describes an avalanche photodiode (APD) fabricated in a 0.5-μm CMOS process. In Geiger mode, the APD had an area-normalized dark count rate as low as 2 Hz/μm2 at room temperature. Its signal-to-noise ratio (SNR) increased by an order of magnitude as a result of perimeter field gating. We demonstrate that under high-illumination conditions, perimeter field gating maximizes SNR, whereas under low-light conditions, it maximizes sensitivity.
Keywords :
CMOS integrated circuits; avalanche photodiodes; readout electronics; APD; CMOS process; Geiger mode; SNR; active readout; area-normalized dark count rate; perimeter field gate; perimeter field gating; signal-to-noise ratio avalanche photodiodes; size 0.5 mum; temperature 293 K to 298 K; CMOS integrated circuits; Electric breakdown; Lighting; Logic gates; Optical variables control; Photonics; Signal to noise ratio; Avalanche breakdown; avalanche photodiodes (APDs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2186112
