Noise modeling and characterization for 1.5-V 1.8-GHz SOI low-noise amplifier

Author

Jin, Wei ; Liu, Weidong ; Hai, Chaohe ; Chan, Philip C.H. ; Hu, Chenming

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, China

Volume

48

Issue

4

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

803

Lastpage

809

Abstract

SOI technology is a promising candidate for radio-frequency and microwave applications. In this work, SOI low-noise amplifiers (LNA) operating at 1.8-GHz under 1.5-V power supply are reported for the first time and the high-frequency noise characteristics are studied. A physical SOI thermal noise model is applied, and all the major noise sources associated with the transistors are modeled. SPICE simulation results of the circuit noise agree well with the measurement data. An LNA composed of floating-body SOI devices offers better performance than that with body-tied devices

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; equivalent circuits; integrated circuit modelling; integrated circuit noise; semiconductor device models; semiconductor device noise; silicon-on-insulator; thermal noise; 1.5 V; 1.8 GHz; HF noise characteristics; RFIC; SOI LNA; SOI MOSFET; SOI low-noise amplifier; SPICE simulation; Si; floating-body SOI devices; noise characterization; noise modeling; noise sources; physical SOI thermal noise model; transistors; Circuit noise; Circuit simulation; Integrated circuit noise; Low-noise amplifiers; Noise figure; Noise measurement; Power supplies; Radio frequency; Radiofrequency integrated circuits; SPICE;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.915730

Filename

915730