Title :
Fast programming/erasing of thin-oxide EEPROMs
Author :
Versari, Roberto ; Pieracci, Augusto ; Riccó, Bruno
Author_Institution :
DEIS, Bologna Univ., Italy
fDate :
4/1/2001 12:00:00 AM
Abstract :
This work demonstrates that conventional thin-oxide EEPROM cells can be programmed (erased) in the nanosecond time scale with voltages lower than 18 V and still feature data retention times of the order of a few hours after 100 K program/erase (P/E) cycles. Our results suggest that thin-oxide nonvolatile (NV) memory devices can be suitable for fast read/write dynamic applications, at least when high cycling endurance is not a primary specification
Keywords :
EPROM; PLD programming; integrated memory circuits; tunnelling; 18 V; EEPROM programming; HV tunneling; data retention time; fast erasing; fast programming; fast read/write dynamic applications; nonvolatile memory devices; thin-oxide EEPROMs; Degradation; EPROM; Electromagnetic heating; Gyrotrons; Nonvolatile memory; Plasma confinement; Plasma sources; Tellurium; Tokamaks; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
