Simulation of anti reflection coating (ARC) based GaAs solar cell with homo-hetero junction

Author

Samal, Animesh ; Mishra, G.P.

Author_Institution

Dept. of Electron. & Instrum. Eng., SOA Univ., Bhubaneswar, India

fYear

2014

fDate

25-26 Sept. 2014

Firstpage

883

Lastpage

886

Abstract

In this work an ARC based GaAs solar cell having both homojunction and heterojunction has been simulated. The cell structure consist of TCO/a-Si:H(p)/GaAs(p)/GaAs(n)/a-Si:H(n)/TCO. The structure has been simulated using Silvaco TCAD. This structure gives higher fill factor due to the reduced series resistance and hence results better efficiency. The work function of the transparent conductive oxide (TCO) also plays a key role for enhancement of the cell performance. For the present model the calculated efficiency is found about thirty four percent.

Keywords

III-V semiconductors; antireflection coatings; elemental semiconductors; gallium arsenide; silicon; solar cells; Si-GaAs-GaAs-Si; Silvaco TCAD; antireflection coating; cell structure; homo-hetero junction; series resistance; solar cell; transparent conductive oxide; Absorption; Gallium arsenide; Junctions; Performance evaluation; Photovoltaic cells; Radiative recombination; Silicon; ARC; Solar Cell; TCO; fill factor; homo-hetero junction;

fLanguage

English

Publisher

ieee

Conference_Titel

Confluence The Next Generation Information Technology Summit (Confluence), 2014 5th International Conference -

Conference_Location

Noida

Print_ISBN

978-1-4799-4237-4

Type

conf

DOI

10.1109/CONFLUENCE.2014.6949329

Filename

6949329