Title :
Advanced physical model for the optimisation of the width of a resistive Schottky barrier field plate
Author :
Lynch, W. ; Cordero, N. ; Kelly, W.M.
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
fDate :
8/1/1998 12:00:00 AM
Abstract :
An advanced physical model based on a solution of Laplace´s equation for a set of prescribed boundary conditions is developed, which describes the potential distribution across a resistive Schottky-barrier field plate (RESP). The model serves to ascertain an optimised RESP width, for an optimised RESP sheet resistance, for any potential bias. Optimising the width of the RESP for an optimised sheet resistance will enhance the reverse breakdown voltage handling capability of a Schottky-barrier diode whose periphery is terminated by such a structure. Using an optimised RESP structure will reduce the material costs and improve the high-speed operation of diodes which are edge-terminated in this manner
Keywords :
Laplace equations; Schottky diodes; power semiconductor diodes; semiconductor device models; Laplace equation; boundary conditions; edge termination; high-speed operation; physical model; potential distribution; resistive Schottky barrier field plate; reverse breakdown voltage; sheet resistance; width optimisation;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19982117