A power amplifier with efficiency improved using defected ground structure

Author

Lim, Jong-Sik ; Kim, Ho-Sup ; Park, Jun-Seok ; Ahn, Dal ; Nam, Sangwook

Author_Institution

Appl. Electromagnetics. Lab., Seoul Nat. Univ., South Korea

Volume

11

Issue

4

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

170

Lastpage

172

Abstract

The authors report the effects of defected ground structure (DGS) on the output power and efficiency of a class-A power amplifier. In order to evaluate the effects of DGS on the efficiency and output power, two class-A GaAs FET amplifiers have been measured at 4.3/spl sim/4.7 GHz. One of them has a 50 /spl Omega/ microstrip line with DGS at the output section, while the other has only 50 /spl Omega/ straight line. It is shown that DGS rejects the second harmonic at the output and yields improved output power and power added efficiency by 1/spl sim/5%.

Keywords

circuit tuning; harmonics; microwave integrated circuits; microwave power amplifiers; 4.3 to 4.7 GHz; GaAs; GaAs FET amplifiers; class-A power amplifier; defected ground structure; efficiency improvement; output power; power added efficiency; second harmonic rejection; Circuit optimization; Dielectric measurements; Etching; Frequency; Joining processes; Microstrip; Power amplifiers; Power generation; Power measurement; Power system harmonics;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/7260.916333

Filename

916333