DocumentCode :
1465537
Title :
Low contact resistance to plasma-etched p-type GaN
Author :
Baharin, A. ; Pinto, R.S. ; Mishra, Umesh K. ; Nener, B.D. ; Parish, G.
Author_Institution :
Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
Volume :
47
Issue :
5
fYear :
2011
Firstpage :
342
Lastpage :
343
Abstract :
Reported is an investigation into the effect of very low plasma power on the electrical characteristics of ohmic contacts to etched p-GaN, by using very low radio frequency (RF) etching power and inductively coupled plasma (ICP) power. The results, assessed by current-voltage (I-V) characteristics and transfer length method analysis, indicate that the ohmic contacts to the etched material were improved significantly by the use of RF/ICP power of 20/40 W. A specific contact resistance as low as 0.035 cm2 was obtained for unannealed contacts. This is the lowest value that has been reported so far for contacts to etched p-GaN without the use of regrowth techniques.
Keywords :
III-V semiconductors; contact resistance; etching; gallium compounds; ohmic contacts; wide band gap semiconductors; current-voltage characteristics; electrical characteristics; inductively coupled plasma power; low contact resistance; low plasma power; ohmic contacts; plasma etched; transfer length method analysis; unannealed contacts;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2010.3052
Filename :
5724158
Link To Document :
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