High-performance laser-processed polysilicon thin-film transistors

Author

Giust, G.K. ; Sigmon, T.W. ; Boyce, J.B. ; Ho, J.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

Volume

20

Issue

2

fYear

1999

Firstpage

77

Lastpage

79

Abstract

We present electrical results from hydrogenated laser-processed polysilicon thin-film transistors (TFT´s) fabricated using a simple four-mask self-aligned aluminum top-gate process. Transistor field-effect mobilities of 280-450 cm/sup 2//Vs and on/off current ratios of more than 10/sup 8/ are measured in these devices. Except for the amorphous-silicon deposition step, the highest processing temperature that the substrate was subjected to was 350/spl deg/C. Such good performance is attributed to an optimized laser-crystallization process combined with hydrogenation.

Keywords

carrier mobility; elemental semiconductors; hydrogenation; laser beam annealing; liquid crystal displays; semiconductor device measurement; silicon; thin film transistors; 350 C; AMLCD; Al; I-V characteristics; Si:H; electrical results; excimer laser annealing; field-effect mobilities; four-mask self-aligned Al top-gate process; hydrogenation; on/off current ratios; optimized laser-crystallization process; polysilicon TFT; processing temperature; Aluminum; Crystallization; Gas lasers; Optical device fabrication; Optical films; Optical pulses; Plasma temperature; Pulsed laser deposition; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.740657

Filename

740657