Title :
Impact of shallow source/drain on the short-channel characteristics of pMOSFETs
Author :
Kurata, H. ; Sugii, T.
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
Abstract :
We investigated the impart of shallow source/drain (S/D) on the characteristics of short-channel pMOSFETs with a gate length of 0.1 μm. We fabricated an ultrashallow S/D junction by solid phase diffusion of boron from a BSG sidewall. By precisely estimating the effective channel length, we found that the threshold voltage roll-off is independent of junction depth. In addition, the current drivability is degraded in a sample with a shallow junction. This makes it clear that a shallow junction with a low surface concentration does not improve the overall characteristics of ultrasmall pMOSFETs.
Keywords :
MOSFET; diffusion; semiconductor doping; 0.1 micron; BSG sidewall; Si:B; current drivability; shallow source/drain junction; short-channel pMOSFET; solid phase diffusion; surface concentration; threshold voltage roll-off; Boron; Current measurement; Degradation; Fabrication; Glass; MOSFET circuits; Semiconductor device doping; Semiconductor device measurement; Solids; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
