Title :
CuO-Nanowire Field Emitter Prepared on Glass Substrate
Author :
Hsueh, H.T. ; Hsueh, T.J. ; Chang, S.J. ; Tsai, T.Y. ; Hung, F.Y. ; Chang, S.P. ; Weng, W.Y. ; Dai, B.T.
Author_Institution :
Inst. of Nanotechnol. & Microsyst. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
This study reports the growth of CuO nanowires (NWs) on glass substrate, and the fabrication of CuO-NW field emitter. Using CuO as the adhesion layer, we successfully grew CuO NWs of 2.5 μ m average length and 70 nm average diameter by thermal annealing at 450 °C for 5 h in air. It was found that turn-ON field of the fabricated field emitters was 4.5 V/μm. It was also found that the field enhancement factor β of the fabricated CuO-NW field emitter was 1610.
Keywords :
annealing; copper compounds; field emission; nanofabrication; nanowires; CuO; SiO2; adhesion layer; field emitter; glass substrate; nanowire; temperature 450 degC; thermal annealing; time 5 h; Adhesives; Copper; Glass; Microelectronics; Silicon; Substrates; CuO; field emission; nanowires (NWs);
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2011.2121092
