Effects of Annealing and p-Doping on the Two-State Competition in 1.3 μm InAs/GaAs Quantum-Dot Lasers

Author

Zhao, H.X. ; Yoon, S.F. ; Ngo, C.Y. ; Wang, R. ; Cao, Q. ; Liu, C.Y.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

10

Issue

6

fYear

2011

Firstpage

1211

Lastpage

1213

Abstract

In this letter, we investigate the effects of annealing and p-doping on the two-state competition of 1.3 μm InAs/GaAs quantum-dot (QD) lasers. By analyzing the modal gain competition from below-ground-state (GS) to above-excited-state (ES) thresholds, we found that: 1) the onset of ES lasing can be significantly delayed to a higher injection current with optimum annealing conditions; and 2) under the same annealing condition, p-doped QD lasers can sustain GS lasing to higher operating temperature as compared to the intrinsic ones. Consequently, we believe that this letter will be beneficial to researchers working on QD lasers for uncooled operation.

Keywords

III-V semiconductors; annealing; excited states; gallium arsenide; ground states; high-temperature effects; indium compounds; quantum dot lasers; semiconductor doping; InAs-GaAs; above-excited-state threshold; annealing effects; below-ground-state threshold; injection current; modal gain competition; p-doping; quantum-dot lasers; two-state competition; uncooled operation; wavelength 1.3 mum; Annealing; Doping; Gallium arsenide; Quantum dot lasers; Temperature measurement; Annealing; modal gain; p-doping; quantum dots (QD);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2011.2123914

Filename

5724306