Title :
Bandstructure Engineering With a 2-D Patterned Quantum Well Superlattice
Author :
Verma, Varun Boehm ; Dias, Neville L. ; Reddy, Uttam ; Bassett, Kevin P. ; Li, Xiuling ; Coleman, James J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
fDate :
4/1/2011 12:00:00 AM
Abstract :
We present experimental results from an edge-emitting diode laser with an active layer consisting of a 2-D patterned quantum well superlattice. We demonstrate control over the density of optical transitions by engineering the unit cell geometry of the lattice.
Keywords :
III-V semiconductors; band structure; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; semiconductor quantum wells; semiconductor superlattices; surface emitting lasers; 2D patterned quantum well superlattice; InGaAs; band structure engineering; edge-emitting diode laser; optical lattice; optical transitions; Gallium arsenide; Geometry; Indium gallium arsenide; Lattices; Potential energy; Superlattices; Coupled quantum dots; quantum dot; quantum dot laser; quantum dot molecule;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2010.2090134
