Title :
25 GHz polarization-insensitive electroabsorption modulators with traveling-wave electrodes
Author :
Zhang, C.Z. ; Yi-Jen Chiu ; Abraham, P. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Electroabsorption modulators with traveling-wave electrodes have been designed and fabricated using MOCVD grown InGaAsP-InGaAsP quantum wells. A modulation bandwidth of 25 GHz is achieved for a 2 μm-wide 30 μm-long device. Driving voltage of 1.20 V is achieved for an extinction ratio of 20 dB for operation at 1.55 μm.
Keywords :
III-V semiconductors; MOCVD; electro-optical modulation; electroabsorption; electrodes; gallium arsenide; gallium compounds; indium compounds; light polarisation; optical communication equipment; semiconductor quantum wells; sensitivity; 1.2 V; 2 mum; 25 GHz; 300 mum; InGaAsP-InGaAsP; InGaAsP-InGaAsP quantum wells; MOCVD grown; driving voltage; extinction rat; modulation bandwidth; polarization-insensitive electroabsorption modulators; traveling-wave electrodes; Coplanar waveguides; Electrodes; Extinction ratio; High speed optical techniques; Optical modulation; Optical saturation; Optical waveguides; Polarization; Tellurium; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
