Array of sensors with A/D conversion based on flip-flops

Author

Lian, Weijian ; Wouters, Sietse E.

Author_Institution

Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands

Volume

39

Issue

4

fYear

1990

fDate

8/1/1990 12:00:00 AM

Firstpage

653

Lastpage

657

Abstract

An array of silicon light intensity sensors is described. Switched bias flip-flops are used to obtain a digital output. The flip-flops contain bipolar transistors which are sensitive to illumination. A triangle-wave voltage is used for analog-to-digital conversion. An analysis of the resolution of the measurement technique when it is used for low-signal level high-resolution measurement is presented. Experimental results for optical flip-flop sensor arrays based on phototransistors, fabricated in the bipolar process, are presented. The devices contain 64 flip-flop sensors organized in 8×8 arrays. Each flip-flop sensor consists of two resistors and two phototransistors, of which one is covered by aluminum

Keywords

analogue-digital conversion; bipolar integrated circuits; flip-flops; photodetectors; phototransistors; A/D conversion; Al; Si photodetector; analog-to-digital conversion; bipolar transistors; light intensity sensors; optical flip-flop sensor arrays; phototransistors; triangle-wave voltage; Bipolar transistors; Flip-flops; Lighting; Optical arrays; Optical sensors; Phototransistors; Sensor arrays; Sensor phenomena and characterization; Silicon; Voltage;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.57250

Filename

57250