Title :
Monolithic high-speed CMOS-photoreceiver
Author :
Zimmermann, H. ; Heide, T. ; Ghazi, A.
Author_Institution :
Lehrstuhl fur Halbleitertech., Kiel Univ., Germany
Abstract :
Results of optoelectronic integrated CMOS receivers for applications in optical data transmission and in optical interconnects are presented. The rise and fall times of the integrated p-i-n photodiodes (PDs) are 0.19 and 0.24 ns, respectively, corresponding to -3 dB bandwidths in excess of 1.4 GHz. These PDs combine this high speed with a high quantum efficiency. Rise and fall times of 0.53 and 0.69 ns, respectively, are obtained for CMOS optoelectronic integrated circuits (OEICs) with integrated p-i-n PD´s. These OEICs in 1.0 μm CMOS technology handle a data rate of 622 Mb/s with a single-supply voltage of 3.3 V.
Keywords :
CMOS integrated circuits; high-speed optical techniques; integrated optoelectronics; optical interconnections; optical receivers; p-i-n photodiodes; 0.19 ns; 0.24 ns; 0.53 ns; 0.69 ns; 1 mum; 1.4 GHz; 3.3 V; 622 Mbit/s; CMOS optoelectronic integrated circuits; OEIC; data rate; fall times; high quantum efficiency; high speed; integrated p-i-n PD; integrated p-i-n photodiodes; monolithic high-speed CMOS-photoreceiver; optical data transmission; optical interconnects; optoelectronic integrated CMOS receivers; rise times; single-supply voltage; Bandwidth; CMOS integrated circuits; CMOS technology; Data communication; High speed optical techniques; Integrated circuit technology; Integrated optics; Optical interconnections; Optical receivers; PIN photodiodes;
Journal_Title :
Photonics Technology Letters, IEEE
