Monolithic high-speed CMOS-photoreceiver

Author

Zimmermann, H. ; Heide, T. ; Ghazi, A.

Author_Institution

Lehrstuhl fur Halbleitertech., Kiel Univ., Germany

Volume

11

Issue

2

fYear

1999

Firstpage

254

Lastpage

256

Abstract

Results of optoelectronic integrated CMOS receivers for applications in optical data transmission and in optical interconnects are presented. The rise and fall times of the integrated p-i-n photodiodes (PDs) are 0.19 and 0.24 ns, respectively, corresponding to -3 dB bandwidths in excess of 1.4 GHz. These PDs combine this high speed with a high quantum efficiency. Rise and fall times of 0.53 and 0.69 ns, respectively, are obtained for CMOS optoelectronic integrated circuits (OEICs) with integrated p-i-n PD´s. These OEICs in 1.0 μm CMOS technology handle a data rate of 622 Mb/s with a single-supply voltage of 3.3 V.

Keywords

CMOS integrated circuits; high-speed optical techniques; integrated optoelectronics; optical interconnections; optical receivers; p-i-n photodiodes; 0.19 ns; 0.24 ns; 0.53 ns; 0.69 ns; 1 mum; 1.4 GHz; 3.3 V; 622 Mbit/s; CMOS optoelectronic integrated circuits; OEIC; data rate; fall times; high quantum efficiency; high speed; integrated p-i-n PD; integrated p-i-n photodiodes; monolithic high-speed CMOS-photoreceiver; optical data transmission; optical interconnects; optoelectronic integrated CMOS receivers; rise times; single-supply voltage; Bandwidth; CMOS integrated circuits; CMOS technology; Data communication; High speed optical techniques; Integrated circuit technology; Integrated optics; Optical interconnections; Optical receivers; PIN photodiodes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.740721

Filename

740721