Two-chip InGaAs-InP Fabry-Perot p-i-n receiver for WDM systems

Author

Peerlings, J. ; Riemenschneider, R. ; Kumar, Vaegae Naveen ; Strassner, M. ; Pfeiffer, J. ; Scheuer, V. ; Daleiden, J. ; Mutamba, K. ; Herbst, S. ; Hartnagel, H.L. ; Meissner, P.

Author_Institution

Inst. fur Hochfrequenztech., Darmstadt Tech. Univ., Germany

Volume

11

Issue

2

fYear

1999

Firstpage

260

Lastpage

262

Abstract

For the first time a two-chip wavelength-selective InGaAs-InP Fabry-Perot p-i-n receiver for dense wavelength-division-multiplexed systems is presented. This concept allows one to easily place the p-i-n diode outside the resonant cavity. A cavity length of more than 30 μm is applied to obtain a small optical bandwidth of the receiver. The device can be combined with micromachined actuators for wavelength tuning. First measurements of the receiver showed a full-width at half-maximum bandwidth of 0.6 nm and a finesse of 53. The overall losses of the receiver including fiber-to-chip coupling losses are 6.6 dB.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; micro-optics; micromachining; optical communication equipment; optical losses; p-i-n photodiodes; photodetectors; wavelength division multiplexing; 30 mum; InGaAs-InP; InGaAs-InP Fabry-Perot p-i-n receiver; WDM systems; cavity length; dense wavelength-division-multiplexed systems; fiber-to-chip coupling losses; full-width at half-maximum bandwidth; micromachined actuators; overall losses; p-i-n diode; receiver; resonant cavity; small optical bandwidth; two-chip InGaAs-InP Fabry-Perot p-i-n receiver; wavelength tuning; wavelength-selective; Actuators; Bandwidth; Fabry-Perot; Optical fiber losses; Optical receivers; Optical tuning; P-i-n diodes; PIN photodiodes; Resonance; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.740723

Filename

740723