Title :
High-efficiency CW operation of MOCVD-grown GaAs/AlGaAs vertical-cavity lasers with resonant periodic gain
Author :
Schaus, C.F. ; Raja, M. Yasin Akhtar ; McInerney, J.G. ; Schaus, H.E. ; Sun, Sen ; Brueck, S.R.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
fDate :
5/11/1989 12:00:00 AM
Abstract :
A GaAs/AlGaAs vertical-cavity surface-emitting laser with resonant periodic gain has been grown by metal-organic chemical vapour deposition. The as-grown structure exhibits an optically pumped CW threshold below 15 mW at 300 K and a single-ended power efficiency up to 45%. Fundamental Gaussian and higher-order modes are observed with spectral widths (FWHM) as low as 0.27 AA.
Keywords :
CVD coatings; III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor growth; semiconductor junction lasers; 300 K; 45 percent; CW operation; GaAs-AlGaAs; MOCVD; as-grown structure; higher-order modes; optically pumped CW threshold; resonant periodic gain; single-ended power efficiency; spectral widths; surface-emitting laser; vertical-cavity lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890432
