Title :
Ka-band high power pseudomorphic heterostructure FET
Author :
Smith, P.M. ; Lester, L.F. ; Ferguson, D.W. ; Chao, P.C. ; Ho, Paul ; Kao, Min-Chi ; Ballingall, J.M. ; Smith, R.P.
Author_Institution :
Electron. Lab., General Electric Co., Syracuse, NY, USA
fDate :
5/11/1989 12:00:00 AM
Abstract :
A 0.25 mu m gate-length, 900 mu m gate width doped-channel, pseudomorphic heterostructure FET with high output power and efficiency is reported. At 35 GHz output power is 658 mW with 3.2 dB power gain and 24% power-added efficiency.
Keywords :
field effect transistors; power transistors; solid-state microwave devices; 0.25 micron; 35 GHz; 658 mW; 900 micron; doped-channel; efficiency; gate width; gate-length; high power pseudomorphic heterostructure FET; output power; power gain; power-added efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890433
