Title :
Electron-phonon interaction within an unbiased and biased quantum well
Author :
Lefebvre, Kevin R. ; Anwar, A.F.M.
Author_Institution :
Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA
fDate :
2/1/1999 12:00:00 AM
Abstract :
This paper addresses the electron-phonon interaction when a perpendicular electric field is applied across a quantum well (QW). An applied perpendicular electric field redistributes the one-dimensional density of states in position and energy within a QW. The redistribution of the one-dimensional density of states modifies the calculation of the initial and final states in the electron-phonon interaction. The overall result is to increase the scattering rate between the electrons and phonons while adding additional characteristics to the shape of the phonon scattering time
Keywords :
electron-phonon interactions; electronic density of states; semiconductor quantum wells; 1D density of states; applied perpendicular electric field; biased quantum well; electron-phonon interaction; one-dimensional density; one-dimensional density of states; perpendicular electric field; phonon scattering time; scattering rate; unbiased quantum well; Absorption; Charge carrier processes; Dark current; Electrons; Optical scattering; Particle scattering; Phonons; Quantum well devices; Shape; Systems engineering and theory;
Journal_Title :
Quantum Electronics, IEEE Journal of
