DocumentCode :
1466282
Title :
Analysis of Electrothermal Effects in Bipolar Differential Pairs
Author :
D´Alessandro, Vincenzo ; Spina, Luigi La ; Nanver, Lis K. ; Rinaldi, Niccolò
Author_Institution :
Univ. of Naples Federico II, Naples, Italy
Volume :
58
Issue :
4
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
966
Lastpage :
978
Abstract :
An extensive experimental and theoretical analysis of bipolar differential pairs subject to radical electrothermal feedback is presented. Measurements demonstrate that considerable thermally-induced degradation of circuit characteristics may occur, eventually turning into the full disappearance of a linear region, which is replaced by a hysteresis behavior under voltage-controlled conditions. An analytical model is derived for a simple yet reliable prediction of the distortion of I- V curves. A more elaborated circuit approach is employed to accurately quantify the concurrent destabilizing action of electrothermal and impact ionization effects, as well as to evaluate the impact of layout asymmetries and examine the beneficial influence of emitter degeneration resistors. Simulation results are found to compare favorably with experiments performed on silicon-on-glass test structures with various layouts and isolation schemes, from which the benefits of thermally coupling the two devices become evident.
Keywords :
emitter-coupled logic; feedback; heterojunction bipolar transistors; impact ionisation; resistors; bipolar differential pair; circuit thermally-induced degradation; electrothermal effect; emitter degeneration resistor; hysteresis behavior; impact ionization effect; radical electrothermal feedback; silicon-on-glass test structure; voltage-controlled condition; Hysteresis; Integrated circuit modeling; Isothermal processes; Junctions; Thermal resistance; Transistors; Voltage measurement; Analog circuits; bipolar junction transistor (BJT); breakdown voltage; differential pair; electrothermal simulation; emitter-coupled logic; heterojunction bipolar transistor (HBT); impact ionization; self-heating; silicon germanium (SiGe); silicon-on-glass (SOG); thermal coupling; thermal instability; thermal resistance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2106132
Filename :
5725176
Link To Document :
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