Title :
Performance of 1.5 mu m lambda /4-shifted DFB-SIPBH laser diodes with electron beam defined and reactive ion-etched gratings
Author :
Zah, C.E. ; Caneau, Catherine ; Menocal, S.G. ; Lin, P.S.D. ; Favire, F. ; Yi-Yan, A. ; Lee, T.P. ; Dentai, A.G. ; Joyner, Charles H.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
5/11/1989 12:00:00 AM
Abstract :
1.5 mu m lambda /4-shifted DFB-SIPBH laser diodes were made with electron-beam-defined and reactive ion etched gratings. The surface damage created by the reactive ion etching has no adverse effect on the device performances. The resultant devices with a 254 mu m cavity length had a minimum linewidth of 3 MHz and a 3 dB modulation bandwidth of 7 GHz.
Keywords :
diffraction gratings; distributed feedback lasers; semiconductor junction lasers; sputter etching; 1.5 micron; 245 micron; 7 GHz; cavity length; device performances; electron beam defined; lambda /4-shifted DFB-SIPBH laser diodes; minimum linewidth; modulation bandwidth; reactive ion-etched gratings; surface damage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890440
