Title :
Disorder-induced buried-stripe optical waveguides in GaAs/AlGaAs MQW material
Author :
Weiss, B.L. ; Roberts, John
Author_Institution :
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
fDate :
5/11/1989 12:00:00 AM
Abstract :
Buried-stripe optical waveguides have been fabricated in GaAs/AlGaAs multiquantum-well material by masked Si+ implantation followed by annealing at 750 degrees C to produce selective-area quantum well mixing. The waveguides were found to support both TE and TM modes with propagation losses of 33 and 56 dBcm-1, respectively, at a wavelength of 1.15 mu m.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; ion implantation; optical losses; optical waveguides; optical workshop techniques; semiconductor quantum wells; 1.15 micron; 750 degC; GaAs-AlGaAs:Si; III-V semiconductors; MQW material; TE mode; TM modes; annealing; buried-stripe; fabrication; integrated optics; masked Si + implantation; multiquantum-well material; optical waveguides; propagation losses; selective-area quantum well mixing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890442
