Title :
Dark current reduction in APD with BCB passivation
Author :
Kim, H.S. ; Choi, J.H. ; Bang, H.M. ; Jee, Y. ; Yun, S.W. ; Burm, J. ; Kim, M.D. ; Choo, A.G.
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
fDate :
3/29/2001 12:00:00 AM
Abstract :
Mesa-structure superlattice avalanche photodiodes (SL-APDs) were fabricated using three different passivation materials, benzocyclobutene (BCB). polyimide and SiNx. The best dark current was from BCB passivated devices with a mesa-diameter of 30 μm was 38 nA when operated, approximately a factor of 10 improvement compared with other reports
Keywords :
avalanche photodiodes; dark conductivity; optical materials; organic compounds; passivation; superlattices; 30 mum; 38 nA; APD; BCB passivated devices; BCB passivation; SiN; SiNx; benzocyclobutene; dark current reduction; mesa-diameter; mesa-structure superlattice avalanche photodiode; passivation materials; polyimide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010318
