• DocumentCode
    1466579
  • Title

    Dark current reduction in APD with BCB passivation

  • Author

    Kim, H.S. ; Choi, J.H. ; Bang, H.M. ; Jee, Y. ; Yun, S.W. ; Burm, J. ; Kim, M.D. ; Choo, A.G.

  • Author_Institution
    Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
  • Volume
    37
  • Issue
    7
  • fYear
    2001
  • fDate
    3/29/2001 12:00:00 AM
  • Firstpage
    455
  • Lastpage
    457
  • Abstract
    Mesa-structure superlattice avalanche photodiodes (SL-APDs) were fabricated using three different passivation materials, benzocyclobutene (BCB). polyimide and SiNx. The best dark current was from BCB passivated devices with a mesa-diameter of 30 μm was 38 nA when operated, approximately a factor of 10 improvement compared with other reports
  • Keywords
    avalanche photodiodes; dark conductivity; optical materials; organic compounds; passivation; superlattices; 30 mum; 38 nA; APD; BCB passivated devices; BCB passivation; SiN; SiNx; benzocyclobutene; dark current reduction; mesa-diameter; mesa-structure superlattice avalanche photodiode; passivation materials; polyimide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010318
  • Filename
    917490
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1466579