DocumentCode
14666
Title
A Design for In-Situ Measurement of Optical Degradation of High Power Light-Emitting Diodes Under Accelerated Life Test
Author
Quan Chen ; Qi Chen ; Sheng Liu ; Xiaobing Luo
Author_Institution
Sch. of Electron. & Electr. Eng., Wuhan Textile Univ., Wuhan, China
Volume
14
Issue
2
fYear
2014
fDate
Jun-14
Firstpage
645
Lastpage
650
Abstract
To better understand the reliability problem in high-power light-emitting diodes (LEDs), an online test is critical under an accelerated life test. In this paper, an experimental equipment was proposed for in situ measurement to evaluate the degradation of LED´s optical properties. Signals such as illuminance and correlated color temperature were transmitted by the heat-resistant optical cable and were finally collected by detectors with high precision. The multichannel outputs were provided to simultaneously measure several samples. The measuring distance optimization was conducted by a ray tracing method, and the characteristics of optical output were listed. Accelerated life tests also indicate that the system error is less than 0.2%, and the measuring uncertainty of equipment can be controlled within 2%. A comparison experiment according to LM-80 measurement standard also shows a good agreement between the experimental data and the reference value.
Keywords
life testing; light emitting diodes; measurement standards; ray tracing; LM-80 measurement standard; accelerated life test; detectors; heat-resistant optical cable; high power light-emitting diodes; illuminance; optical degradation; ray tracing method; Detectors; Light emitting diodes; Optical fiber cables; Optical fibers; Optical variables measurement; Temperature measurement; Light-emitting diodes; accelerated life test; in situ measurement;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2014.2309127
Filename
6750752
Link To Document